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oxygen plasma中文

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用"oxygen plasma"造句"oxygen plasma" in a sentence"oxygen plasma"怎麼讀
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  • 氧等離子體
例句與用法
  • Influence of in - situ oxygen plasma processing on the resistivity of diamond thin film
    原位氧等離子體處理對金剛石薄膜電阻率的影響
  • Found that antistatic property of flock fabric was increased when the flock was treated by oxygen plasma
    實驗表明經氧等離子處理的絨毛制得的植絨織物其抗靜電性能提高。
  • In order to modify wool fabrics properties , low - temperature oxygen plasma is used to treat wool fabric
    摘要為了改善羊毛織物的氈縮、潤濕等性能,采用低溫氧等離子體對羊毛織物進行改性處理。
  • To approach as a resist in dry etching processing , etching properties of the films in oxygen plasma have been investigated
    為了探索該種薄膜在干刻蝕工藝過程中用作掩膜的可能性,還研究了它在氧離子體中的刻蝕性能。
  • On the other hand , oxygen plasma treatment makes ito film oxidized further , which decreases the number of oxygen vacancy and sn ~ ( 4 + )
    另一方面,氧等離子體處理使ito薄膜表面的富sn氧化物進一步氧化,形成穩定的sno ,減少了ito薄膜表面的氧空位和sn ~ ( 4 + )數量,使其功函數增大。
  • It is found that ito surface roughness decreased after oxygen plasma treatment , which can improve its wetting performance and consequently improve the film performance
    經氧等離子體處理后, ito薄膜的表面粗糙度減小,平整度提高,提高了ito薄膜表面的潤濕性能,改善了有機物在其表面的成膜性能。
  • The experiment result shows that with low - temperature oxygen plasma treatment , fabric ' s shrinkage and wettability have bettered a great deal , and fabric ' s breaking strength and breaking elongation is also increased in given condition
    有效控制處理條件,織物的斷裂強力和伸長率不但不會減小,反而可以得到一定程度的增強。
  • The results show that amorphous carbon films have high etching resistance against oxygen plasma , and etch rates of the films correlated not only with etching processing parameters , also with deposition conditions
    結果表明非晶碳膜對于氧離子體具有高的抗刻蝕性,其刻蝕率不僅與刻蝕的過程參量有關,而且決定于膜的沉積條件。
  • In the present work , water plasma ion implantation , instead of the conventional oxygen plasma ion implantation , has been employed to fabricate soi materials . the masses of the three dominant ion species in the water vapor plasma , h2o + , ho + , and o + , are very close to each other , which overcome the problem of co - existence of o and 02 in oxygen plasma source . the oxygen depth profiles in the water plasma ion as - implanted silicon do not disperse much , which makes it possible for the formation of single buried oxide ( box ) layer by choosing appropriate implantation energy and dose
    本論文創造性地采用水等離子體離子注入方式代替傳統的氧離子注入方式來制備soi結構材料,由于水等離子體中的三種離子h _ 2o ~ + 、 ho ~ +和o ~ +質量數相差很小,克服了氧等離子體中因o _ 2 ~ +和o ~ +質量數相差大而引起的氧在硅中的分布彌散,使注入硅后的氧射程分布相對集中,比較容易退火后形成soi結構材料。
  • The chief results and conclusion thus arrived at are as folloes : ( 1 ) the morphology and electrical properties of indium - tin - oxide ( ito ) films which were treated respectively by ethanol , naoh , sulfuric and oxygen plasma , were studied from microscopic view by atomic force microscopy , x - ray photoelectron spectroscopy and goniometer
    ( 1 )利用原子力顯微鏡、接觸角測試儀、紫外分光光度計從微觀角度研究了乙醇、氫氧化鈉、濃硫酸、氧等離子體處理對ito薄膜的表面性能和光電性能的影響。
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