p區英文

英文翻譯手機版

In this design , the double graded doping solar cell accumulates the minority carriers with the drift field , which is located at the whole graded space . this means that the accumulation of minority carriers doesn ’ t depend on the above conditions
采用與眾不同的通過在p區和n區都采用梯度摻雜這樣一個所謂雙梯度摻雜,在整個有源層獲得高達104v / cm的漂移電場。
We define the recombination time of excess electrons in p field as the minority carrier lifetime . in theory , we developed the equation between excess minority carriers lifetime and the open - circuit voltage decay ; moreover , the effect of capacitance to general open - circuit voltage is also investigated . both different efficiency solar cells are measured by the method and showed the relations between the minority carrier lifetime and the performance of solar cells , which provides great useful guidelines for fabricating high - efficiency silicon solar cell in industry
根據太陽電池的工作原理，詳細地論述了用脈沖光源照射n / p結太陽電池時光電壓的產生，理論上給出了注入p區的電子復合帶來的開路電壓與少子壽命的關系，也研究了n / p結勢壘電容放電對開路電壓衰減的影響關系，推導了利用開路電壓隨時間衰減的關系來測量少數載流子壽命的理論公式。